Author Affiliations
Abstract
1 Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering,Tianjin University of Technology, Tianjin 300384, China
2 Research and Development Center of Silicon Devices and Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences, Beijing 100029, China
Gallium oxide (Ga2O3) films were deposited on singlecrystalline sapphire (0001) substrate by radio frequency (RF) magnetron sputtering technique in the temperature range of 300—500 °C. The microstructure of the β-Ga2O3films were investigated in detail using X-ray diffractometer (XRD) and scanning electron microscope (SEM). The results show that the film prepared at 500 °C exhibits the best crystallinity with a monoclinic structure (β-Ga2O3). Structure analysis reveals a clear out-of-plane orientation of β-Ga2O3(201) || Al2O3(0001). The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared (UV-vis-NIR) spectrophotometer. Therefore, it is hopeful that the β-Ga2O3film can be used in the UV optoelectronic devices.
光电子快报(英文版)
2017, 13(4): 295
Author Affiliations
Abstract
Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China
Indium oxide (In2O3) films were prepared on Al2O3(0001) substrates at 700 °C by metal-organic chemical vapor deposition (MOCVD). Then the samples were annealed at 800 °C, 900 °C and 1 000 °C, respectively. The X-ray diffraction (XRD) analysis reveals that the samples were polycrystalline films before and after annealing treatment. Triangle or quadrangle grains can be observed, and the corner angle of the grains becomes smooth after annealing. The highest Hall mobility is obtained for the sample annealed at 900 °C with the value about 24.74 cm2·V-1·s-1. The average transmittance for the films in the visible range is over 90%. The optical band gaps of the samples are about 3.73 eV, 3.71 eV, 3.70 eV and 3.69 eV corresponding to the In2O3 films deposited at 700 °C and annealed at 800 °C, 900 °C and 1 000 °C, respectively.
光电子快报(英文版)
2016, 12(1): 39
Author Affiliations
Abstract
1 Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
In this paper, the positive influence of apodization weighting method on frequency characteristics of surface acoustic wave (SAW) temperature sensor is investigated. Simulation and experiment results show that side lobe suppression abilities of the sensor can be improved by using apodization weighting which is based on Chebyshev window. Meanwhile, we find that the side lobe of the sensor can be further restrained, when the dummy electrodes are removed. Frequency- temperature characteristics of the devices are independent of the inclusion of dummy electrodes. The apodization weighted SAW temperature sensor shows great application potential in occasions with strong electromagnetic interference.
光电子快报(英文版)
2015, 11(2): 88
Author Affiliations
Abstract
Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information Engineering,Tianjin University of Technology, Tianjin 300384, China
Flexible TiO2 memory devices are fabricated on a plastic substrate at room temperature. The metal-insulator-metal (MIM) structure is grown on polyimide (PI). Several metals with different ductilities, such as Al, W, Cu and Ag, are selected as electrode. The test results show that the samples have stable resistive switching behaviors, and the electric characteristics can stay stable even after the radius of substrate is bent up to 10 mm. After 103times of substrate bending, the memory cells with W as bottom electrode on PI still show stable resistive switching characteristics and low switching voltages. The set voltage and reset voltage can be as low as 0.9 V and 0.3 V, respectively.
光电子快报(英文版)
2013, 9(4): 263
作者单位
摘要
京东方科技集团股份有限公司 技术中心, 北京100176
为了降低薄膜晶体管液晶显示器(TFT-LCD)的功耗, 提出了一种新的双栅之型反转驱动方法。研究了双栅之型反转驱动技术的节能原理, 完成了相关结构设计、电路设计, 制作了35.6 cm(14 in)WXGA(1 366 RGB×768)样品, 测试并分析了节能效果。结果表明, 该技术可以有效降低TFT-LCD的功耗, 在显示彩条画面的情况下, 液晶屏模拟电源功耗降低了70%(191 mW)。分析了出现的莫尔条纹问题, 并提出了解决方案。该研究为降低TFT-LCD及其他显示设备的功耗提供了一种驱动方法及设计参考。
低功耗 驱动 双栅之型反转 莫尔条纹 TFT-LCD TFT-LCD low power consumption driving dual-gate+Z-inversion Moiré phenomenon 
液晶与显示
2012, 27(6): 785
作者单位
摘要
1 北京京东方茶谷电子有限公司,北京100176
2 京东方科技集团股份有限公司中央研究院,北京100016
传统的背光源采用的是CCFL,色彩还原性差,含有对人体有害的汞蒸汽。LED 背光源是一种新型的背光源,色彩还原性好,寿命长;不含汞,有利于环境保护。本文设计的直下式LED背光源,单灯电流可精确控制,光学效果良好,支持PWM 调光。中尺寸、大尺寸LED 背光源均可借鉴使用.
发光二极管背光:冷阴极荧光灯 色彩还原性 单片机 LED Backlight CCFL color gamut single-chip microcomputer 
现代显示
2009, 20(3): 58

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